Synchronization between an excitation source and a substrate bias supply
US10896807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2020 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Feb 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.