Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same

US10896852B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Scott B. Clendenning · Portland, US
• Martin M. Mitan · Beaverton, US
• Aaron A. Budrevich · Portland, US

Key dates

• Filing date: Sep 17, 2015
• Grant date: Jan 19, 2021
• Expiry date: Oct 7, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/121

Abstract

Methods for doping a subfin region of a semiconductor fin structure include forming a fin on a substrate; forming an oxide material on the substrate and a portion of the fin that corresponds to a sub-fin region of the fin; forming a hard mask on a top-fin region of the fin that is disposed above the sub-fin region; exposing a surface of the sub-fin region by removing the oxide material from a surface of the sub-fin region and leaving a layer of the oxide material on the substrate; depositing a dopant material on the hard mask, the surface of the subfin region, and the layer of the oxide material on the substrate; and removing the hard mask from the top-fin region to expose a surface of the top-fin region. Devices constructed using the disclosed methods are also provided, and other embodiments are discussed.