Martin M. Mitan
9Patents
3h-index
20Co-inventors
53Inventor score
Filing activity: Feb 6, 2002 → Jan 21, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6750124B1 | Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer | Electricity | 4 | Expired |
| US10720508B2 | Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping | Electricity | 3 | Active |
| US10396176B2 | Selective gate spacers for semiconductor devices | Electricity | 3 | Active |
| US10971600B2 | Selective gate spacers for semiconductor devices | Electricity | 1 | Active |
| US11869889B2 | Self-aligned gate endcap (SAGE) architectures without fin end gap | Electricity | 1 | Active |
| US11532724B2 | Selective gate spacers for semiconductor devices | Electricity | 0 | Active |
| US10896852B2 | Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same | Electricity | 0 | Active |
| US10998423B2 | Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping | Electricity | 0 | Active |
| US11810980B2 | Channel formation for three dimensional transistors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.