Patent · US Active

Field effect transistor with reduced contact resistance

US10896956B2 · kind B2 · utility

3Cited by

1References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Remi Coquand · Chambéry, FR
Shay Reboh · Grenoble, FR

Key dates

Filing date	Dec 22, 2017
Grant date	Jan 19, 2021
Priority date	—
Expiry date	Dec 22, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6219
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

FET transistor (100) comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.