Physically unclonable function implemented with spin orbit coupling based magnetic memory

US10897364B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Vivek K. De · Beaverton, US
• Krishnan Ravichandran · Saratoga, US
• Harish Krishnamurthy · Beaverton, US
• Khondker Ahmed · Hillsboro, US
• Sriram R. Vangal · Portland, US
• Vaibhav Vaidya · Portland, US
• Turbo Majumder · Portland, US
• Christopher Schaef · Hillsboro, US
• Suhwan Kim · Seoul, KR
• Xiaosen Liu · Portland, US
• Nachiket Desai · Cambridge, US

Key dates

• Filing date: Dec 18, 2017
• Grant date: Jan 19, 2021
• Expiry date: Nov 15, 2038

Classification

• Technology area (CPC G): Physics
• CPC primary: G09C1/00
• WIPO field: Control
• WIPO sector: Instruments

Abstract

Spin Hall Effect (SHE) magneto junction memory cells (e.g., magnetic tunneling junction (MTJ) or spin valve based memory cells) are used to implement high entropy physically unclonable function (PUF) arrays utilizing stochastics interactions of both parameter variations of the SHE-MTJ structures as well as random thermal noises. An apparatus is provided which comprises: an array of PUF devices, wherein an individual device of the array comprises a magnetic junction and an interconnect, wherein the interconnect comprises a spin orbit coupling material; a circuitry to sense values stored in the array, and to provide an output; and a comparator to compare the output with a code.