Patent · US Active

Plasma corridor for high volume PE-CVD processing

US10900117B2 · kind B2 · utility

0Cited by

0References

31Claims

0Family size

Assignee

Vapor Technologies, Inc. · US

Inventors

Vladimir Gorokhovsky · Lafayette, US
Ganesh Kamath · Ann Arbor, US
Bryce Randolph ANTON · Longmont, US
Rudi Koetter · Longmont, US

Key dates

Filing date	Oct 24, 2018
Grant date	Jan 26, 2021
Priority date	—
Expiry date	Mar 2, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01J37/3417
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A coating system includes a coating chamber having a peripheral chamber wall, a top wall, and a bottom wall. The peripheral chamber wall defines a chamber center. A plasma source is positioned at the chamber center. The coating system also includes a sample holder that holds a plurality of substrates to be coated which is rotatable about the chamber center at a first distance from the chamber center. A first isolation shield is positioned about the chamber center at a second distance from the chamber center, the first isolation shield being negatively charged.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.