Tungsten precursor and method of forming Tungsten containing layer using the same
US10900119B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 27, 2017 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Oct 14, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below.In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.