Semiconductor device of electrostatic discharge protection
US10903205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2019 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Aug 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
A semiconductor device of ESD protection includes a first P-type well in a substrate to receive a protected terminal and a first N-type well abutting the first P-type well in the substrate. A second P-type well abutting the first N-type well is in the substrate. A second N-type well abutting the second P-type well is in the substrate. A detective circuit device is formed on a surface of the substrate, having an input terminal to receive the protected terminal and an output terminal to provide a trigger voltage to the first N-type well. A first route structure is in the substrate, on a sidewall and a bottom of the first P-type well to connect to a bottom of the first N-type well. A second route structure is in the substrate, on sidewall and bottom of the second N-type well, to connect to a bottom of the second P-type well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.