Semiconductor storage device
US10903228B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2018 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Aug 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device includes a semiconductor substrate and a plurality of first wiring layers stacked above the semiconductor substrate in a first direction orthogonal to the semiconductor substrate, and extending in a second direction intersecting the first direction and parallel to the semiconductor substrate. The device further includes a first memory pillar including a semiconductor layer and a first insulation layer extending in the first direction, the first insulation layer provided between the plurality of first wiring layers and the semiconductor layer so as to contact the semiconductor layer, and charge storage layers provided respectively between the plurality of first wiring layers and the first insulation layer. One or more of the charge storage layers is in contact with the first insulation layer. A plurality of second insulation layers is provided between each of the plurality of first wiring layers and each of the charge storage layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.