Integrated circuits (ICs) on a glass substrate
US10903240B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2019 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | May 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) includes a glass substrate and a buried oxide layer. The IC additionally includes a first semiconductor device coupled to the glass substrate. The first semiconductor device includes a first gate and a first portion of a semiconductive layer coupled to the buried oxide layer. The first gate is located between the glass substrate and the first portion of the semiconductive layer and between the glass substrate and the buried oxide layer. The IC additionally includes a second semiconductor device coupled to the glass substrate. The second semiconductor device includes a second gate and a second portion of the semiconductive layer. The second gate is located between the glass substrate and the second portion of the semiconductive layer. The first portion is discontinuous from the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.