Magnetic memory device and fabrication method thereof
US10903269B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2019 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Jul 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a first dielectric layer on a substrate, first and second via plugs in the first dielectric layer, first and second cylindrical memory stacks on the first and second via plugs, respectively, and an insulating cap layer conformally disposed on the first dielectric layer and on sidewalls of the first and second cylindrical memory stacks. The insulating cap layer is not disposed in a logic area and a via forming region between the first and second cylindrical memory stacks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.