Doped gate dielectric materials
US10903333B2 · kind B2 · utility
5Cited by
2References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2017 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Aug 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.