Patent · US Active

Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconductor on insulator (SOI) layer with a backside device

US10903357B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Sinan Goktepeli · San Diego, US
George Imthurn · San Diego, US
Sivakumar KUMARASAMY · San Diego, US

Key dates

Filing date	Oct 4, 2018
Grant date	Jan 26, 2021
Priority date	—
Expiry date	Oct 4, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH04B1/38
WIPO fieldTelecommunications
WIPO sectorElectrical engineering

Abstract

An integrated circuit is described. The integrated circuit includes a laterally diffused metal oxide semiconductor (LDMOS) transistor. The LDMOS is on a first surface of an insulator layer of the integrated circuit. The LDMOS transistor includes a source region, a drain region, and a gate. The LDMOS transistor also includes a secondary well between the drain region and the gate. The secondary well has an opposite polarity from the drain region. The LDMOS transistor further includes a backside device on a second surface opposite the first surface of the insulator layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.