Three dimensional vertically structured MISFET/MESFET

US10903371B2 · kind B2 · utility

Assignees

• Lawrence Livermore National Security, LLC · US
• The Regents of the University of California · US

Inventors

• Adam Conway · Livermore, US
• Sara Elizabeth Harrison · Livermore, US
• Rebecca J. Nikolic · Oakland, US
• Qinghui Shao · Fremont, US
• Lars Voss · Livermore, US
• Srabanti Chowdhury · Goleta, US

Key dates

• Filing date: Jan 7, 2016
• Grant date: Jan 26, 2021
• Expiry date: Jan 7, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.