Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions

US10903377B2 · kind B2 · utility

Assignees

• Micron Technology, Inc. · US
• Massachusetts Institute of Technology · US

Inventors

• Roy Meade · Boise, US
• Karan Mehta · Cambridge, US
• Efraim Megged · Bet Shemesh, IL
• Jason S. Orcutt · Katonah, US
• Milos Popovic · Somerville, US
• Rajeev Ram · Arlington, US
• Jeffrey Shainline · Boulder, US
• Zvi Sternberg · Meitar, IL
• Vladimir Stojanovic · Lexington, US
• Ofer Tehar-Zahav · Petah Tikva, IL

Key dates

• Filing date: Apr 15, 2019
• Grant date: Jan 26, 2021
• Expiry date: Apr 15, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.