Hydride enhanced growth rates in hydride vapor phase epitaxy
US10903389B2 · kind B2 · utility
6Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2019 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Jan 15, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.