Aaron Joseph Ptak
10Patents
5h-index
11Co-inventors
59Inventor score
Filing activity: Aug 31, 2009 → Dec 20, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9824890B2 | High throughput semiconductor deposition system | Chemistry; Metallurgy | 9 | Active |
| US8575471B2 | Lattice matched semiconductor growth on crystalline metallic substrates | Emerging Cross-Sectional Technologies | 8 | Active |
| US10192740B2 | High throughput semiconductor deposition system | Chemistry; Metallurgy | 7 | Active |
| US10903389B2 | Hydride enhanced growth rates in hydride vapor phase epitaxy | Emerging Cross-Sectional Technologies | 6 | Active |
| US9041027B2 | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates | Electricity | 5 | Active |
| US8507365B2 | Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates | Emerging Cross-Sectional Technologies | 3 | Active |
| US8961687B2 | Lattice matched crystalline substrates for cubic nitride semiconductor growth | Electricity | 2 | Active |
| US11177402B2 | Light scattering structures for thin-film solar cells and methods of making the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US12325931B2 | Nitrogen-enabled high growth rates in hydride vapor phase epitaxy | Electricity | 0 | Active |
| US12198924B2 | Epitaxial alkali halide layers for III-V substrate recycling | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.