Patent · US Active

Alignment mark, imprinting method, manufacturing method of semiconductor device, and alignment device

US10908519B2 · kind B2 · utility

1Cited by
1References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 11, 2019
Grant dateFeb 2, 2021
Priority date
Expiry dateSep 11, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2223/54426
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In an alignment mark of an embodiment, a first pattern includes a first portion and a second portion, a second pattern includes a third portion and a fourth portion, the first portion and the third portion partially overlap each other, the second portion and the fourth portion partially overlap each other, a pitch length of each structural periods of the first portion and the third portion are equal within 1.2 times, a pitch length of each structural periods of the second portion and the fourth portion are equal within 1.2 times, a duty ratio of each of the first and third portions is 1:1, and a duty ratio of the second portion is D:2, and D is an integer of two or more, the duty ratio being a ratio between a light-shielding portion and a light-transmitting portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.