Ion source, ion implantation apparatus, and ion source operating method
US10910192B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2018 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Aug 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0268
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source includes a vacuum chamber having a cooling mechanism, an ion generation container for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode for extracting ions generated in the ion generation container and generating an ion beam, and a shielding member provided inside and in the vicinity of an inner wall of the vacuum chamber, and having a main body made of a conductive metal for blocking deposition of an insulating material on the inner wall (10d) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.