SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus

US10910218B2 · kind B2 · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Kenichi Hamano · Tokyo, JP
• Akihito Ohno · Tokyo, JP
• Takuma Mizobe · Tokyo, JP
• Yasuhiro Kimura · Tokyo, JP
• Yoichiro Mitani · Tokyo, JP

Key dates

• Filing date: Apr 6, 2017
• Grant date: Feb 2, 2021
• Expiry date: Apr 6, 2037

Classification

• Technology area (CPC —): General

Abstract

A SiC substrate (1) has an off angle θ°. A SiC epitaxial layer (2) having a film thickness of Tm μm is provided on the SiC substrate (1). Triangular defects (3) are formed on a surface of the SiC epitaxial layer (2). A density of triangular defects (3) having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A. A density of triangular (3) defects having a length smaller than Tm/Tan θ×0.9 in the substrate off direction is denoted by B. B/A≤0.5 is satisfied.