Patent · US Active

Method of producing a semiconductor laser and semiconductor laser

US10910226B2 · kind B2 · utility

0Cited by

1References

14Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Alfred Lell · Maxhütte-Haidhof, DE
Georg Brüderl · Burglengenfeld, DE
John Brückner · Santa Monica, US
Sven Gerhard · Alteglofsheim, DE
Muhammad Ali · Dublin, IE
Thomas Adlhoch · Brennberg, DE

Key dates

Filing date	Oct 25, 2017
Grant date	Feb 2, 2021
Priority date	—
Expiry date	Oct 25, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/032
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.