Patent · US Active

Engineered substrate structure and method of manufacture

US10910258B2 · kind B2 · utility

2Cited by
8References
8Claims
0Family size

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Inventors

Key dates

Filing dateNov 4, 2019
Grant dateFeb 2, 2021
Priority date
Expiry dateNov 4, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31111
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A substrate includes a polycrystalline ceramic core; a first adhesion layer encapsulating the polycrystalline ceramic core; a conductive layer encapsulating the first adhesion layer; a second adhesion layer encapsulating the conductive layer; a barrier layer encapsulating the second adhesion layer, and a bonding layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the bonding layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.