Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same
US10910272B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2019 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Oct 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K77/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A support substrate including a plurality of channels on a front side is provided. A cover layer is formed by anisotropically depositing a sacrificial cover material over the plurality of channels. Cavities laterally extend within the plurality of channels underneath a horizontally extending portion of the cover layer. An encapsulation layer is conformally deposited. First semiconductor devices, first metal interconnect structures, and first bonding pads are formed over a top surface of the encapsulation layer. A device substrate with second bonding pads is provided. The second bonding pads are bonded with the first bonding pads to form a bonded assembly. Peripheral portions of the encapsulation layer are removes and peripheral portions of the cover layer are physically exposed. The cover layer is removed employing an isotropic etch process by propagating an isotropic etchant through the cavities to separate the support substrate from the bonded assembly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.