Devices including vias extending through alternating dielectric materials and conductive materials, and related electronic devices
US10910306B2 · kind B2 · utility
0Cited by
6References
20Claims
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Assignee
Inventor
Key dates
| Filing date | May 8, 2020 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | May 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a capacitor structure. The capacitor structure comprises conductive vias extending through openings in a stack of alternating dielectric materials and first conductive materials, each conductive via comprising a second conductive material extending through the openings and another dielectric material on sidewalls of the openings, first conductive lines in electrical communication with a first group of the conductive vias, and second conductive lines in electrical communication with a second group of the conductive vias. Related semiconductor device, electronic systems, and methods are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.