Memory device
US10910558B2 · kind B2 · utility
2Cited by
3References
26Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 6, 2019 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Aug 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium. In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.