Burst mode operation conditioning for a memory device
US10916306B2 · kind B2 · utility
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14References
8Claims
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Key dates
| Filing date | Mar 7, 2019 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Mar 7, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0061
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A controller for a phase change memory forms a dedicated burst write partition in the phase change memory and initializes memory cells of the dedicated burst write partition to a SET state. Programming of selected memory cells in the dedicated burst write partition is carried out using only RESET pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.