Insulator, capacitor with the same and fabrication method thereof, and method for fabricating semiconductor device
US10916419B2 · kind B2 · utility
1Cited by
2References
28Claims
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Key dates
| Filing date | Dec 20, 2018 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Dec 20, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.