KEY FOUNDRY CO., LTD.
43Patents
43Active
43Granted
56Portfolio score
Filing activity: Sep 6, 2018 → Jan 5, 2023
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10923603B2 | Semiconductor device comprising Schottky barrier diodes | Electricity | 3 | Active |
| US11121253B2 | High voltage semiconductor device and manufacturing method of high voltage semiconductor device | Electricity | 3 | Active |
| US11532741B2 | Semiconductor device having vertical DMOS and manufacturing method thereof | Electricity | 2 | Active |
| US11145379B2 | Electronic fuse cell array structure | Electricity | 2 | Active |
| US11581434B2 | High voltage semiconductor device and manufacturing method of high voltage semiconductor device | Electricity | 2 | Active |
| US10916419B2 | Insulator, capacitor with the same and fabrication method thereof, and method for fabricating semiconductor device | Emerging Cross-Sectional Technologies | 1 | Active |
| US10867677B2 | Single poly multi time program cell and method of operating the same | Physics | 1 | Active |
| US11799493B2 | Analog-to-digital converter and operation method thereof | Electricity | 1 | Active |
| US11757011B2 | Semiconductor device with non-volatile memory cell and manufacturing method thereof | Electricity | 1 | Active |
| US11848061B2 | Non-volatile memory device including sense amplifier and method for operating the same | Physics | 1 | Active |
| US11362197B2 | Semiconductor device with controllable channel length and manufacturing method of semiconductor device with controllable channel length | Electricity | 1 | Active |
| US11615989B2 | Semiconductor device having deep trench structure and method of manufacturing thereof | Electricity | 1 | Active |
| US11854622B2 | Electrical fuse one time programmable (OTP) memory | Physics | 1 | Active |
| US11665896B2 | Semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device | Electricity | 1 | Active |
| US10985074B2 | Method of manufacturing a CMOS transistor | Electricity | 0 | Active |
| US10950614B2 | Single poly non-volatile memory device, method of manufacturing the same and single poly non-volatile memory device array | Physics | 0 | Active |
| US11367661B2 | Semiconductor device having deep trench structure and method of manufacturing thereof | Electricity | 0 | Active |
| US11024398B2 | Semiconductor device having a diode type electrical fuse (e-fuse) cell array | Electricity | 0 | Active |
| US11538541B2 | Semiconductor device having a diode type electrical fuse (e-fuse) cell array | Electricity | 0 | Active |
| US11289498B2 | Semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device | Electricity | 0 | Active |
| US11348931B2 | Nonvolatile memory device | Electricity | 0 | Active |
| US11469320B2 | High voltage semiconductor device having bootstrap diode | Electricity | 0 | Active |
| US11915767B2 | Negative voltage switching device and non-volatile memory device using the same | Physics | 0 | Active |
| US10978587B2 | Semiconductor device | Electricity | 0 | Active |
| US11862695B2 | Split gate power MOSFET and split gate power MOSFET manufacturing method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.