Forming contact holes using litho-etch-litho-etch approach
US10916427B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2018 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Jul 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a semiconductor device, comprising: first, a target layer is provided, an etching stop layer is formed on the target layer, afterwards, a first photoresist layer is formed on the etching stop layer, and a first etching process is then performed, to forma plurality of first trenches in the etching stop layer. Next, a second photoresist layer is formed on the etching stop layer, portion of the second photoresist layer fills in each first trench, a second etching process is then performed to form a plurality of second trenches in the etching stop layer, and using the remaining etching stop layer as a hard mask, a third etching process is performed to remove parts of the target layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.