Semiconductor device with buried local interconnects
US10916468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2017 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Oct 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide methods for fabricating a semiconductor device with buried local interconnects. One method may include providing a semiconductor substrate with fins etched into the semiconductor substrate; forming a first set of spacers along the sides of the fins; depositing a tungsten film over the top surface of the substrate; etching the tungsten film to form a buried local interconnect; forming a set of gates and a second set of spacers; forming a source and drain region adjacent to the fins; depositing a first insulating material over the top surface of the substrate; and creating contact between the set of gates and the source and drain region using an upper buried local interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.