Semiconductor device and manufacturing method thereof
US10916502B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2018 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Aug 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, an underlying insulation layer, a conductive via and a sidewall insulation layer. The underlying insulation layer is over the semiconductor substrate. The conductive via is through the semiconductor substrate and the underlying insulation layer. The sidewall insulation layer is between the semiconductor substrate and the conductive via. The sidewall insulation layer includes a protrusion stopping at an interface between the semiconductor substrate and the underlying insulation layer, and protruding outwardly into the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.