Thin-film transistor and method of forming an electrode of a thin-film transistor
US10916569B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Feb 13, 2018 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Aug 13, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.