Optoelectronic device with light-emitting diodes
US10916580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2017 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Dec 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/851
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an optoelectronic device, comprising the successive steps of: providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; forming a stack of semiconductor layers on the first face, said stack including third and fourth opposite faces, the fourth face being on the side of the substrate, said stack including light-emitting diodes; forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate; forming conductive pads on the fourth face in at least some of the openings in contact with the stack; and forming photoluminescent blocks in at least some of the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.