Monolithic integrated circuits with multiple types of embedded non-volatile memory devices
US10916583B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 27, 2016 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Dec 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Circuits are described that use metallization on both sides techniques to integrate two different types of non-volatile embedded memory devices within a single monolithic integrated circuit device. In an embodiment, a monolithic integrated circuit structure is provided that includes a device layer having one or more logic transistors. A front side interconnect layer is provided above the device layer, as seen in a vertical cross-section taken through the monolithic integrated circuit from top to bottom. A back side interconnect layer is provided below the device layer, as seen in the vertical cross-section. A first type of non-volatile memory device is provided in the front side interconnect layer, and a second type of non-volatile memory device different from the first type of non-volatile memory device is provided in the back side interconnect layer. A back side contact may be used to connect the device layer to a back side interconnect layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.