Inventor · Portland, OR, US

Yih Wang

60Patents
6h-index
78Co-inventors
75Inventor score

Filing activity: Jun 30, 2004 → Oct 25, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9041146B2 Logic chip including embedded magnetic tunnel junctions Electricity 25 Active
US8519462B2 6F2 DRAM cell Electricity 16 Active
US7177176B2 Six-transistor (6T) static random access memory (SRAM) with dynamically variable p-channel metal oxide semiconductor (PMOS) strength Physics 14 Expired
US8451670B2 Adaptive and dynamic stability enhancement for memories Physics 12 Active
US10916583B2 Monolithic integrated circuits with multiple types of embedded non-volatile memory devices Electricity 7 Active
US9997563B2 Logic chip including embedded magnetic tunnel junctions Electricity 7 Active
US9660181B2 Logic chip including embedded magnetic tunnel junctions Electricity 6 Active
US9478273B2 Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory Physics 5 Active
US9953986B2 Method and apparatus for improving read margin for an SRAM bit-cell Physics 5 Active
US9455011B2 Methods and systems to read a magnetic tunnel junction (MTJ) based memory cell based on a pulsed read current Physics 5 Active
US9111600B2 Memory cell with improved write margin Physics 5 Active
US11469268B2 Damascene-based approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures Electricity 4 Active
US10964701B2 Vertical shared gate thin-film transistor-based charge storage memory Electricity 4 Active
US9818933B2 6F2 non-volatile memory bitcell Electricity 3 Active
US10644064B2 Logic chip including embedded magnetic tunnel junctions Electricity 3 Active
US10541014B2 Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same Physics 3 Active
US9865322B2 Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory Physics 3 Active
US11373999B2 Deep trench via for three-dimensional integrated circuit Electricity 2 Active
US11329047B2 Thin-film transistor embedded dynamic random-access memory with shallow bitline Electricity 2 Active
US9805790B2 Memory cell with retention using resistive memory Physics 1 Active
US10483321B2 High density memory architecture using back side metal layers Physics 1 Active
US10068628B2 Apparatus for low power write and read operations for resistive memory Physics 1 Active
US11393873B2 Approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures Electricity 1 Active
US9330747B2 Non-volatile latch using spin-transfer torque memory device Physics 1 Active
US11245038B2 Vertical multi-gate thin film transistors Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.