Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof
US10916655B2 · kind B2 · utility
2Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2019 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Oct 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric semiconductor device includes an active region extending in one direction, a gate insulating layer crossing the active region, a ferroelectric layer disposed on the gate insulating layer and including a hafnium oxide, a gate electrode layer disposed on the ferroelectric layer, and source/drain regions disposed on the active region to be adjacent to both sides of the gate insulating layer, wherein the ferroelectric layer includes 20% or more of orthorhombic crystals, and an upper surface of the source/drain region is located at a level equal to or higher than an upper surface of the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.