Materials and methods for chemical mechanical polishing of ruthenium-containing materials
US10920105B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 28, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jun 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.