Methods for forming single crystal silicon ingots with improved resistivity control
US10920337B2 · kind B2 · utility
1Cited by
2References
14Claims
0Family size
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Key dates
| Filing date | Dec 27, 2017 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Dec 27, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.