Metal oxide film and manufacturing method thereof, thin film transistor and array substrate
US10923347B2 · kind B2 · utility
0Cited by
1References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 17, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jul 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and supplying a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.