Semiconductor device and manufacturing method of semiconductor device
US10923395B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Jul 15, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jul 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, a semiconductor element is formed in a semiconductor, an interlayer insulating film having a contact hole and containing at least one of phosphorus and boron is disposed above the semiconductor, a metal electrode is disposed above the interlayer insulating film and is connected to the semiconductor element through the contact hole, and the interlayer insulating film is filled with hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.