Semiconductor device
US10923475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Apr 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.