Micrometer scale light emitting diode displays on patterned templates and substrates
US10923628B2 · kind B2 · utility
10Cited by
21References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Sep 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8514
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height, including a plurality of epitaxial layers such as a first n-layer, a first p-layer, and a first active layer. A second flat region at a second height and parallel to the first flat region includes at least a second n-layer. Sloped sidewalls connect the first flat region and the second flat region and include at least a third n-layer. The p-layer of the first flat region is thicker that at least a portion of the third region. A p-contact is formed on the first p-layer and an n-contact is formed on the second n-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.