John E. Epler
75Patents
17h-index
47Co-inventors
84Inventor score
Filing activity: Nov 21, 1986 → Nov 4, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7256483B2 | Package-integrated thin film LED | Electricity | 125 | Expired |
| US7024370B2 | Methods and apparatus for early detection of health-related events in a population | Emerging Cross-Sectional Technologies | 93 | Expired |
| US6956246B1 | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal | Electricity | 67 | Expired |
| US7488621B2 | Package-integrated thin film LED | Electricity | 58 | Active |
| US7462502B2 | Color control by alteration of wavelength converting element | Electricity | 44 | Active |
| US4771010A | Energy beam induced layer disordering (EBILD) | Electricity | 32 | Expired |
| US7902566B2 | Color control by alteration of wavelength converting element | Electricity | 27 | Active |
| US7754507B2 | Method of removing the growth substrate of a semiconductor light emitting device | Electricity | 27 | Active |
| US7626210B2 | Low profile side emitting LED | Electricity | 27 | Active |
| US4962057A | Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5436192A | Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5114877A | Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth | Emerging Cross-Sectional Technologies | 24 | Expired |
| US7736945B2 | LED assembly having maximum metal support for laser lift-off of growth substrate | Electricity | 23 | Active |
| US5138625A | Quantum wire semiconductor laser | Electricity | 22 | Expired |
| US7875533B2 | Package-integrated thin film LED | Electricity | 21 | Active |
| US7675084B2 | Photonic crystal light emitting device | Electricity | 20 | Active |
| US5013684A | Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth | Emerging Cross-Sectional Technologies | 17 | Expired |
| US10964845B2 | Micro light emitting devices | Electricity | 15 | Active |
| US10811460B2 | Micrometer scale light emitting diode displays on patterned templates and substrates | Electricity | 14 | Active |
| US8334155B2 | Substrate for growing a III-V light emitting device | Electricity | 12 | Active |
| US10923628B2 | Micrometer scale light emitting diode displays on patterned templates and substrates | Electricity | 10 | Active |
| US9312437B2 | P-contact with more uniform injection and lower optical loss | Electricity | 8 | Active |
| US7442965B2 | Photonic crystal light emitting device | Electricity | 8 | Expired |
| US5563094A | Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7601989B2 | LED with porous diffusing reflector | Electricity | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.