Method of forming nitride film
US10927454B2 · kind B2 · utility
3Cited by
3References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 14, 2017 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Feb 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.