Akinobu Teramoto
70Patents
9h-index
86Co-inventors
81Inventor score
Filing activity: Jul 8, 1998 → Mar 3, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7521324B2 | Semiconductor device and method for manufacturing the same | Electricity | 51 | Expired |
| US8716114B2 | Semiconductor device manufacturing method and semiconductor device | Electricity | 36 | Active |
| US7663195B2 | P-channel power MIS field effect transistor and switching circuit | Electricity | 26 | Expired |
| US7975901B2 | Bonding apparatus and wire bonding method | Electricity | 22 | Active |
| US8399862B2 | Ion implanting apparatus and ion implanting method | Electricity | 19 | Active |
| US7411274B2 | Silicon semiconductor substrate and its manufacturing method | Electricity | 12 | Expired |
| US7928518B2 | P-channel power MIS field effect transistor and switching circuit | Electricity | 10 | Active |
| US9230799B2 | Method for fabricating semiconductor device and the semiconductor device | Electricity | 10 | Active |
| US7179746B2 | Method of surface treatment for manufacturing semiconductor device | Electricity | 9 | Expired |
| US7812595B2 | Electronic device identifying method | Emerging Cross-Sectional Technologies | 7 | Active |
| US6649969B2 | Nonvolatile semiconductor device | Electricity | 6 | Expired |
| US8841545B2 | Solar cell wherein solar photovolatic thin film is directly formed on base | Emerging Cross-Sectional Technologies | 6 | Active |
| US8575023B2 | Contact formation method, semiconductor device manufacturing method, and semiconductor device | Electricity | 4 | Active |
| US8183670B2 | Semiconductor device and method of manufacturing the same | Electricity | 4 | Active |
| US6472700B2 | Semiconductor device with isolation insulator, interlayer insulation film, and a sidewall coating film | Emerging Cross-Sectional Technologies | 3 | Expired |
| US10927454B2 | Method of forming nitride film | Electricity | 3 | Active |
| US6720601B2 | Semiconductor device comprising a gate conductive layer with a stress mitigating film thereon | Electricity | 3 | Expired |
| US7820558B2 | Semiconductor device and method of producing the semiconductor device | Electricity | 3 | Active |
| US6221771A | Method of forming tungsten silicide film, method of fabricating semiconductor devices and semiconductor manufactured thereby | Chemistry; Metallurgy | 3 | Expired |
| US6683004B1 | Method of manufacturing a semiconductor device, and semiconductor device manufactured thereby | Electricity | 3 | Expired |
| US7848828B2 | Method and apparatus for managing manufacturing equipment, method for manufacturing device thereby | Emerging Cross-Sectional Technologies | 2 | Active |
| US8906796B2 | Method of producing semiconductor transistor | Electricity | 2 | Active |
| US7863925B2 | Test circuit, wafer, measuring apparatus, and measuring method | Physics | 2 | Active |
| US7898033B2 | Semiconductor device | Electricity | 2 | Active |
| US7960937B2 | Inverter unit, integrated circuit chip, and vehicle drive apparatus | Emerging Cross-Sectional Technologies | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.