Radiation source for lithography process
US10928741B2 · kind B2 · utility
2Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2020 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | May 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/0094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.