Gallidation assisted impurity doping
US10930506B2 · kind B2 · utility
1Cited by
0References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Jun 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in a direction substantially normal to the portion of the surface. The structure has less than 1% decomposition of the Group-III-nitride at the surface of the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.