Contact over active gate structure
US10930555B2 · kind B2 · utility
2Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Sep 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of overlapping masks in a three-color process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.