Bi-directional snapback ESD protection circuit
US10930644B2 · kind B2 · utility
0Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 2018 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | May 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ESD protection circuit having a discharging transistor and a body snatching circuit. The discharging transistor is electrically coupled between a first node and a second node. The gate of the discharging transistor is electrically coupled to a driving voltage. The body snatching circuit receives the voltages at the first and second nodes and outputs either the voltage at the first node or the voltage at the second node based on which of these two voltages have a lower value. The output voltage of the body snatching circuit is provided to the body of the discharging transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.