Eric Braun
17Patents
3h-index
9Co-inventors
49Inventor score
Filing activity: Aug 20, 2002 → May 21, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8922963B2 | Electrostatic discharge protection circuit and method thereof | Electricity | 10 | Active |
| US9502251B1 | Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing process | Electricity | 5 | Active |
| US9941171B1 | Method for fabricating LDMOS with reduced source region | Electricity | 3 | Active |
| US10665712B2 | LDMOS device with a field plate contact metal layer with a sub-maximum size | Electricity | 2 | Active |
| US6646490B1 | Bipolar breakdown enhancement circuit for tri-state output stage | Electricity | 2 | Expired |
| US9450052B1 | EEPROM memory cell with a coupler region and method of making the same | Electricity | 2 | Active |
| US9595952B2 | Switching circuit and the method thereof | Electricity | 2 | Active |
| US9245647B2 | One-time programmable memory cell and circuit | Electricity | 2 | Active |
| US10083930B2 | Semiconductor device reducing parasitic loop inductance of system | Emerging Cross-Sectional Technologies | 1 | Active |
| US9893518B2 | ESD protection circuit with false triggering prevention | Electricity | 1 | Active |
| US10069422B2 | Synchronous switching converter and associated integrated semiconductor device | Emerging Cross-Sectional Technologies | 1 | Active |
| US9893146B1 | Lateral DMOS and the method for forming thereof | Electricity | 1 | Active |
| US10263420B2 | Bi-directional snapback ESD protection circuit | Electricity | 1 | Active |
| US9892787B2 | Multi-time programmable non-volatile memory cell and associated circuits | Physics | 1 | Active |
| US11508806B1 | Low leakage ESD MOSFET | Electricity | 0 | Active |
| US11282959B2 | FET device insensitive to noise from drive path | Electricity | 0 | Active |
| US10930644B2 | Bi-directional snapback ESD protection circuit | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.